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參數資料
| 型號： | NTMFS4841N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 57 A(30V, 57A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，57甲（30V的，57A條，功率MOSFET的） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 85K |
| 代理商： | NTMFS4841N |
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 1
1
Publication Order Number:
NTMFS4841N/D
NTMFS4841N
Power MOSFET
30 V, 57 A, Single NChannel, SO8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Device
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current R
JA
(Note 1)
Power Dissipation
R
JA
(Note 1)
Continuous Drain
Current R
JA
(Note 2)
Power Dissipation
R
JA
(Note 2)
Continuous Drain
Current R
JC
(Note 1)
Power Dissipation
R
JC
(Note 1)
Pulsed Drain
Current
V
DSS
V
GS
I
D
30
±
20
13.1
V
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
9.5
T
A
= 25
°
C
P
D
2.17
W
T
A
= 25
°
C
I
D
8.3
A
T
A
= 85
°
C
6
T
A
= 25
°
C
P
D
0.87
W
T
C
= 25
°
C
I
D
57
A
T
C
= 85
°
C
41
T
C
= 25
°
C
P
D
41.7
W
t
p
=10 s
T
A
= 25
°
C
I
DM
115
A
Operating Junction and Storage
Temperature
T
J
,
T
STG
I
S
dV/dt
EAS
55 to
+150
°
C
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 19 A
pk
, L = 1.0 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
35
6
180
A
V/ns
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
http://onsemi.com
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
4841N
AYWW
1
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
7.0 m @ 10 V
57 A
11.4 m @ 4.5 V
G (4)
S (1,2,3)
NCHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4841NT1G
SO8FL
(PbFree)
1500 /
Tape & Reel
NTMFS4841NT3G
SO8FL
(PbFree)
5000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTMFS4841NH | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL |
| NTMFS4841NHT1G | 功能描述:MOSFET NFET S08FL 30V 57A 7mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4841NHT3G | 功能描述:MOSFET NFET S08FL 30V 57A 7MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4841NT1G | 功能描述:MOSFET NFET 30V 57A 7MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4841NT3G | 功能描述:MOSFET NFET 30V 57A 7MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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