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參數資料
| 型號： | NTP12N50 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 12 Amps, 500 Volts N-Channel(12A,500V,N溝道增強型MOS場效應管(TO-220封裝）) |
| 中文描述： | 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | NTP12N50 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
NTP12N50/D
NTP12N50, NTB12N50
Preferred Device
Advance Information
Power MOSFET
12 Amps, 500 Volts
N–Channel TO–220 and D2PAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Typical Applications
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
500
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
500
Vdc
10 ms)
VGS
VGSM
20
40
Vdc
Drain
– Continuous
– Continuous @ 100
°
C
– Single Pulse (tp
Total Power Dissipation
Derate above 25
°
C
10
μ
s)
ID
ID
IDM
PD
12
10
42
Adc
202
1.61
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to 150
°
C
Single Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 100 V, VGS = 10 Vdc,
IL = 12 A, L = 10 mH, RG = 25
)
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
EAS
720
mJ
R
θ
JC
R
θ
JA
R
θ
JA
TL
0.62
62.5
50
°
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8
″
from case
for 10 seconds
260
°
C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
12 AMPERES
500 VOLTS
RDS(on) = 500 m
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
NTP12N50
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
NTx12N50 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
NTP12N50
LLYWW
Gate
Source
Drain
NTB12N50
LLYWW
Gate
Source
Drain
Drain
1
2
3
D2PAK
CASE 418B
STYLE 2
4
NTB12N50
D2PAK
50 Units/Rail
NTB12N50T4
D2PAK
800/Tape & Reel
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTP12N50/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 12 Amps， 500 Volts |
| NTP1-2PL38 | 制造商:ITT Interconnect Solutions 功能描述:NTP1-2PL38 - Bulk |
| NTP1-2SL38 | 制造商:ITT Interconnect Solutions 功能描述:NTP1-2SL38 - Bulk |
| NTP1-36SH041 | 制造商:ITT Interconnect Solutions 功能描述:NTP1-36SH041 - Bulk |
| NTP13N10 | 功能描述:MOSFET 100V 13A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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