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參數資料
| 型號： | NTB4302 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 74 Amps, 30 Volts |
| 中文描述： | 74 A, 30 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 71K |
| 代理商： | NTB4302 |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 1
1
Publication Order Number:
NTP4302/D
NTP4302, NTB4302
Power MOSFET
74 Amps, 30 Volts
NChannel TO220 and D
2
PAK
Features
Low R
DS(on)
Higher Efficiency Extending Battery Life
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
Typical Applications
DCDC Converters
Low Voltage Motor Control
Power Management in Portable and Battery Powered Products: Ie:
Computers, Printers, Cellular and Cordless Telephones, and PCMCIA
Cards
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 10 M
)
GatetoSource Voltage
Continuous
Drain Current
Continuous @ T
C
= 25
°
C
Continuous @ T
C
= 100
°
C
Single Pulse (t
p
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Temperature Range
V
DSS
V
DGR
30
30
Vdc
Vdc
Vdc
V
GS
20
10
μ
s)
I
D
I
D
I
DM
P
D
74
47
175
80
0.66
55 to
+150
722
Adc
Apk
W
W/
°
C
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, L = 5.0 mH
I
L(pk)
= 17 A, V
DS
= 30 Vdc, R
G
= 25
)
E
AS
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
R
θ
JC
R
θ
JA
1.55
70
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 Board using minimum recommended Pad
Size, (Cu Area 0.412 in
2
).
2. Current limited by internal lead wires.
74 AMPERES
30 VOLTS
R
DS(on)
= 9.3 m
Max
Device
Package
Shipping
ORDERING INFORMATION
NTP4302
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
x
NTx4302
LL
Y
WW
= P or B
= Device Code
= Location Code
= Year
= Work Week
NTx4302
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx4302
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418AA
STYLE 2
4
NTB4302
D
2
PAK
50 Units/Rail
NTB4302T4
D
2
PAK
800/Tape & Reel
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTB4302G | 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB4302T4 | 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB4302T4G | 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB45N06 | 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB45N06G | 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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