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參數資料
| 型號： | NTP52N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 52 Amps, 100 Volts |
| 中文描述： | 60 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, TO-220, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 72K |
| 代理商： | NTP52N10 |
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 2
1
Publication Order Number:
NTP52N10/D
NTP52N10
Power MOSFET
52 Amps, 100 Volts
NChannel Enhancement Mode TO220
Features
SourcetoDrain Diode Recovery Time comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
100
Vdc
DraintoSource Voltage (R
GS
= 1.0 M
)
V
DGR
100
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GSM
20
40
Vdc
Drain Continuous @ T
A
25
°
C
Continuous @ T
A
100
°
C
Pulsed (Note 1.)
I
D
I
D
I
DM
52
40
156
Adc
Total Power Dissipation @ T
A
25
°
C
Derate above 25
°
C
P
D
178
1.43
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+150
°
C
Single DraintoSource Avalanche Energy
Starting T
J
= 25
°
C
(V
DD
= 50 V, V
GS
= 10 Vdc,
I
L
(pk) = 40 A, L = 1.0 mH, R
G
= 25
)
E
AS
800
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
θ
JC
R
θ
JA
0.7
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Pulse Test: Pulse Width = 10
μ
s, Duty Cycle = 2%.
T
L
260
°
C
52 AMPERES
100 VOLTS
30 m
@ V
GS
= 10 V
Device
Package
Shipping
ORDERING INFORMATION
NTP52N10
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
NTP52N10 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
NTP52N10
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTP52N10/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 52 Amps, 100 Volts |
| NTP52N10D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 52 Amps, 100 Volts |
| NTP52N10G | 功能描述:MOSFET 100V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP5404N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220 |
| NTP5404NRG | 功能描述:MOSFET NFET TO220 40V 136A 3.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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