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參數資料
| 型號： | NTMS4705N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 12A, Single N Channel, SO8(30V, 12A，功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，12A條，單個N頻道，采用SO8（30V的，第12A，功率MOSFET的） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 72K |
| 代理商： | NTMS4705N |
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 2
1
Publication Order Number:
NTMS4705N/D
NTMS4705N
Power MOSFET
30 V, 12 A, Single NChannel, SO8
Features
Low R
DS(on)
Low Gate Charge
Standard SO8 Single Package
PbFree Package is Available
Applications
Notebooks, Graphics Cards
Synchronous Rectification
High Side Switch
DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
10
A
7.2
t
10 s
12
Power Dissipation
(Note 1)
Steady
State
P
D
1.52
W
t
10 s
2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
7.4
A
5.3
Power Dissipation
(Note 2)
P
D
0.85
W
Pulsed Drain Current
t
p
= 10 s
I
DM
T
J
,
T
stg
36
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
I
S
3.0
A
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 25 V, V
GS
= 10 V, Peak I
L
= 7.5 A,
L = 10 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
E
AS
210
mJ
T
L
260
°
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoAmbient – Steady State (Note 1)
R
JA
R
JA
R
JA
82
°
C/W
JunctiontoAmbient – t
10 s (Note 1)
55
JunctiontoAmbient – Steady State (Note 2)
147
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTMS4705NR2
SO8
2500/Tape & Reel
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
(Note 1)
30 V
8.0 m @ 10 V
12 A
NChannel
D
S
G
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
4
A
1
8
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
10.5 m @ 4.5 V
4705N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
NTMS4705NR2G
SO8
(PbFree)
2500/Tape & Reel
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相關代理商/技術參數 |
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|---|---|
| NTMS4705NR2 | 功能描述:MOSFET 30V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4705NR2G | 功能描述:MOSFET 30V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4706N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8 |
| NTMS4706NR2 | 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4706NR2G | 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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