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參數資料
| 型號： | NTMS7N03R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 7 Amps, 30 Volts |
| 中文描述： | 4.8 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 97K |
| 代理商： | NTMS7N03R2 |
Publication Order Number:
NTMS7N03R2/D
Semiconductor Components Industries, LLC, 2002
November, 2002 - Rev. 3
1
NTMS7N03R2
Power MOSFET
7 Amps, 30 Volts
N-Channel SO-8
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SO-8 Surface Mount Package
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
Typical Applications
DC-DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD in
Many Applications
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Drain-to-Source Voltage
Drain-to-Gate Voltage (R
GS
= 1.0 M
)
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction to Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current - Continuous @ T
A
= 25
°
C
Drain Current
- Continuous @ T
A
= 70
°
C
Drain Current
- Pulsed (Note 4)
Thermal Resistance - Junction to Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current - Continuous @ T
A
= 25
°
C
Drain Current
- Continuous @ T
A
= 70
°
C
Drain Current
- Pulsed (Note 4)
Thermal Resistance - Junction to Ambient
(Note 3)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current - Continuous @ T
A
= 25
°
C
Drain Current
- Continuous @ T
A
= 70
°
C
Drain Current
- Pulsed (Note 4)
Operating and Storage Temperature Range
Symbol
V
DSS
V
DGR
V
GS
R
θ
JA
Value
30
30
±
20
50
Unit
Vdc
Vdc
Vdc
°
C/W
P
D
I
D
I
D
I
DM
R
θ
JA
2.5
8.5
6.8
25
85
Watts
Adc
Apk
°
C/W
P
D
I
D
I
D
I
DM
R
θ
JA
1.47
6.5
5.2
18
156
Watts
Adc
Apk
°
C/W
P
D
I
D
I
D
I
DM
0.8
4.8
3.8
14
Watts
Adc
Apk
°
C
T
J
, T
stg
- 55 to
+150
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 4.0 mH, R
G
= 25
)
1. 2
″
SQ. FR-4 PCB mounting, (2 oz. Cu 0.06
″
thick single sided), 10 Sec. Max.
2. 2
″
SQ. FR-4 PCB mounting, (2 oz. Cu 0.06
″
thick single sided),
t = steady state.
3. Minimum FR4 or G10 PCB, t = steady state.
4. Pulse test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
E
AS
288
mJ
N-C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
1
8
7 AMPERES
30 VOLTS
R
DS(on)
= 23 m
Device
Package
Shipping
ORDERING INFORMATION
NTMS7N03R2
SO-8
2500/Tape & Reel
SO-8
CASE 751
STYLE 13
N-Channel
AYWW
MARKING
DIAGRAM
D
S
G
E7N03
E7N03
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
PIN ASSIGNMENT
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTMS7N03R2_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 7 Amps, 30 Volts |
| NTMS7N03R2G | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMSD2P102LR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMSD2P102LR2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FETKY? |
| NTMSD2P102LR2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NTMSD2P102LR2 |
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