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參數資料
| 型號： | NTMFS4839N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 94K |
| 代理商： | NTMFS4839N |
Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 2
1
Publication Order Number:
NTMFS4839N/D
NTMFS4839N
Power MOSFET
30 V, 66 A, Single N-Channel, SO-8FL
Features
Low R
DS(ON)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
CPU Power Delivery
DC-DC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
±
20
V
Continuous Drain
Current R
JA
(Note 1)
Steady
State
T
A
= 25
°
C
I
D
15
A
T
A
= 85
°
C
11
Power Dissipation
R
JA
(Note 1)
T
A
= 25
°
C
P
D
2.17
W
Continuous Drain
Current R
JA
(Note 2)
T
A
= 25
°
C
ID
9.5
A
T
A
= 85
°
C
7.0
Power Dissipation
R
JA
(Note 2)
T
A
= 25
°
C
P
D
0.87
W
Continuous Drain
Current R
JC
(Note 1)
T
C
= 25
°
C
I
D
66
A
T
C
= 85
°
C
48
Power Dissipation
R
JC
(Note 1)
T
C
= 25
°
C
P
D
41.7
W
Pulsed Drain
Current
T
A
= 25
°
C,
t
p
= 10 s
I
DM
132
A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
+150
°
C
Source Current (Body Diode)
I
S
35
A
Drain to Source DV/DT
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy T
J
= 25
°
C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 19 A
pk
, L = 1.0 mH, R
G
= 25
EAS
180.5
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A
Y
WW
= Assembly Location
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
4839N
AYWW
1
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
5.5 m @ 10 V
66 A
9.5 m @ 4.5 V
G (4)
S (1,2,3)
N-CHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4839NT1G
SO-8FL
(Pb-Free)
1500 /
Tape & Reel
NTMFS4839NT3G
SO-8FL
(Pb-Free)
5000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTMFS4839NH | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL |
| NTMFS4839NHT1G | 功能描述:MOSFET NFET S08FL 30V 66A 5.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4839NHT3G | 功能描述:MOSFET NFET S08FL 30V 66A 5.5MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4839NT1G | 功能描述:MOSFET NFET 30V 66A 6MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4839NT3G | 功能描述:MOSFET NFET 30V 66A 6MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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