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參數資料
| 型號： | NUS2045MN |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Overvoltage Protection IC with Integrated MOSFET |
| 中文描述： | 過壓保護集成電路集成MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大小： | 138K |
| 代理商： | NUS2045MN |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 4
Publication Order Number:
NUS2045MN/D
NUS2045MN, NUS3045MN
Overvoltage Protection IC
with Integrated MOSFET
These devices represent a new level of safety and integration by
combining the NCP345 overvoltage protection circuit (OVP) with a
20 V Pchannel power MOSFET (NUS2045MN) or with a 30 V
Pchannel power MOSFET (NUS3045MN). They are specifically
designed to protect sensitive electronic circuitry from overvoltage
transients and power supply faults. During such hazardous events, the
IC quickly disconnects the input supply from the load, thus protecting
the load before any damage can occur.
The OVP ICs are optimized for applications using an external
ACDC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. They have a nominal overvoltage
threshold of 6.85 V which makes them ideal for single cell LiIon as
well as 3/4 cell NiCD/NiMH applications.
Features
OvervoltageTurnOff Time of Less Than 1.0 s
Accurate Voltage Threshold of 6.85 V, Nominal
Undervoltage Lockout Protection; 2.8 V, Nominal
Control Input Compatible with 1.8 V Logic Levels
20 V or 30 V Integrated PChannel Power MOSFET
Low R
DS(on)
= 71 m @ 4.5 V for NUS2045MN
Low R
DS(on)
= 66 m @ 4.5 V for NUS3045MN
Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable
Applications
Maximum Solder Reflow temperature @ 235
°
C for MNT1 suffix and
260
°
C for MNT1G suffix
PbFree Packages are Available
Benefits
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Applications
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
http://onsemi.com
DFN8
CASE 506AL
Device
Package
Shipping
ORDERING INFORMATION
NUS2045MNT1
DFN8
3000 Tape & Reel
IN
GND
CNTRL
DRAIN
V
CC
OUT
GATE
SRC
(Bottom View)
PIN ASSIGNMENT
x045
x
A
Y
WW
= Device Code
= 2 or 3
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
x045
AYWW
1
1
2
3
4
8
7
6
5
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUS3045MNT1
DFN8
3000 Tape & Reel
1
8
GND
10
DRAIN
9
NUS2045MNT1G
DFN8
(PbFree)
3000 Tape & Reel
NUS3045MNT1G
DFN8
(PbFree)
3000 Tape & Reel
相關PDF資料 |
PDF描述 |
|---|---|
| NUS2045MNT1 | Overvoltage Protection IC with Integrated MOSFET |
| NUS2045MNT1G | Overvoltage Protection IC with Integrated MOSFET |
| NUS3045MN | Overvoltage Protection IC with Integrated MOSFET |
| NUS3045MNT1 | Overvoltage Protection IC with Integrated MOSFET |
| NUS3045MNT1G | Overvoltage Protection IC with Integrated MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NUS2045MNT1 | 功能描述:IC OVP W/20V P-CH MOSFET DFN8 RoHS:否 類別:過電壓，電流，溫度裝置 >> TVS - 其它復合 系列:- 標準包裝:1 系列:- 電壓 - 工作:120V 電壓 - 箝位:- 技術:混合技術 功率（瓦特）:- 電路數:1 應用:通用 封裝/外殼:模塊 供應商設備封裝:- 包裝:散裝 其它名稱:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST |
| NUS2045MNT1G | 功能描述:IC OVP W/20V P-CH MOSFET DFN8 RoHS:是 類別:過電壓，電流，溫度裝置 >> TVS - 其它復合 系列:- 標準包裝:1 系列:- 電壓 - 工作:120V 電壓 - 箝位:- 技術:混合技術 功率（瓦特）:- 電路數:1 應用:通用 封裝/外殼:模塊 供應商設備封裝:- 包裝:散裝 其它名稱:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST |
| NUS2401SNT1 | 功能描述:開關晶體管 - 偏壓電阻器 200mA 50V Integrated RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| NUS2401SNT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Integrated PNP/NPN Digital Transistors Array |
| NUS2401SNT1G | 功能描述:開關晶體管 - 偏壓電阻器 200mA 50V Integrated NPN/PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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