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參數(shù)資料
| 型號(hào)： | OP793 |
| 廠商： | Optek Technology |
| 英文描述： | NPN Pho to tran sis tor with Base- Emitter Resistor |
| 中文描述： | npn型河粉的轉(zhuǎn)錄矽統(tǒng)Tor和基地發(fā)射極電阻 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 236K |
| 代理商： | OP793 |
Fea ures
Variety of sensitivity ranges
TO-18 equivalent package style
Base-emitter resistor provides ambient
light protection
De scrip ion
The OP793/OP798 series consists of
NPN silicon phototransistors molded in
dark blue epoxy packages. These
devices are 100% production tested
using infrared light for close correlation
with Optek’s GaAs and GaAlAs emitters.
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Ab so lute Maxi mum Rat ings
(T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Con inu ous Col ec or Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Stor age and Op er at ng Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 3.33 mW/
o
C above 25
o
C.
(3) V
= 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission
wavelength of 890 nm and E
e(APT)
of 1.7 mW/cm
2
average within a .250" dia. aperture.
(4) The knee point irradiance is defined as the irradiance required to increase I
C(ON)
to 50
μ
A.
Typi cal Per form ance Curves
Prod uct Bul le tin OP793, OP798
Sep tem ber 1999
NPN Pho o ran sis or with Base- Emitter Resistor
Types OP793, OP798 Series
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Typi cal Spec tral Re sponse
Wave length - nm
Sche matic
OP793
OP798
NOTE: Dimensions not shown on OP798
are common with OP793.
Dimensions are in inches (millimeters).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP798 | NPN Pho to tran sis tor with Base- Emitter Resistor |
| OP800 | NPN Silicon Phototransistors |
| OP910W | PIN Silicon Photodiode |
| OP910 | PIN SILICON PHOTODIODE |
| OPA1202 | Solid State Switches |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP793A | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP793B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP793C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP793D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP798 | 制造商:OPTEK 制造商全稱(chēng):OPTEK 功能描述:NPN Pho to tran sis tor with Base- Emitter Resistor |
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