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參數資料
型號: OPE5587
廠商: Electronic Theatre Controls, Inc.
英文描述: High Speed GaAlAs Infrared Emitter
中文描述: 高速紅外發射器的GaAIAs
文件頁數: 1/2頁
文件大小: 194K
代理商: OPE5587
13
High Speed GaAlAs Infrared Emitter
OPE5587
The
OPE5587
is GaAlAs infrared emitting diode DIMENSIONS
(Unit : mm)
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
Ultra high-speed : 25ns rise time
880nm wavelength
Narrow beam angle
Low forward voltage
High power and high reliability
Available for pulse operating
APPLICATIONS
Emitter of IrDA
IR Audio and Telephone
High speed IR communication
IR LANs
Available for wireless digital data transmission
STORAGE
Condition : 5
°
C~35
°
C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Power Dissipation
P
D
Forward current
I
F
Pulse forward current
I
FP
Reverse voltage
V
R
Operating temp.
Topr.
-25~ +85
Soldering temp.
Tsol.
1
.Duty ratio = 1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2
mm
from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
(Ta=25
°
C)
Item
Symbol
Forward voltage
V
F
Reverse current
I
R
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
tr/tf
(Ta=25
°
C )
Unit
Rating
150
100
1.0
4.0
1
A
°
C
°
C
2
260
.
Conditions
I
F
=50
V
R
=4V
f=1
I
F
=50
I
F
=50
I
F
=50
I
F
=50
I
F
=50
I
F
Min.
Typ.
1.5
Max.
2.0
10
Unit
V
μ
20
90
880
45
±
10
25/15
40
/
deg.
ns
Cut off frequency
*3
fc
14
MHz
*3
. 10logPo(fc
MHz
)/Po(0.1
MHz
)=-3
2-
0.5
2
Anode
Cathode
8
7
1
2.5
2
5
5
Tolerance :
±
0.2mm
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