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參數資料
| 型號： | P2N2369A |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 225K |
| 代理商： | P2N2369A |
NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR
P2N2369A
TO - 92
Plastic Package
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
MAX
0.85
0.15
1.60
Base Emitter Saturation Voltage
V
BE(sat)
*
I
C
=10mA, I
B
=1mA
I
C
=30mA, I
B
=3mA
I
C
=100mA, I
B
=10mA
I
C
=10mA, I
B
=1mA
Ta=+125oC
I
C
=10mA, I
B
=1mA
Ta= -55oC
I
C
=10mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
Ta= -55oC
I
C
=30mA, V
CE
=0.4V
I
C
=100mA, V
CE
=1V
I
C
=10mA, V
CE
=0.35v
V
V
V
DC Current Gain
h
FE
*
120
120
I
E
=0, V
CB
=5V
f=140KHz
V
CE
=10V,I
C
=10mA
f=100MH
Z
SWITCHING CHARCTERISTICS
I
C
=10mA, I
B1
=3mA,
I
B2
=1.5mA, V
CC
=3V
I
C
=10mA, I
B1
=3mA,
V
CC
=3V,I
B2
=1.5mA
I
C
=100mA, I
B1
=10mA,
I
B2
= 10mA, V
CC
=10V
*Pulse Condition: Width < 300
m
s, Duty Cycle < 2%.
13
ns
Turn off Time
t
off
12
Storage Time
t
s
ns
15
ns
500
Turn on Time
t
on
MHz
Output Capacitance
C
ob
4
pF
Transition Frequency
f
T
1.02
V
V
UNIT
DYNAMIC CHARACTERISTICS
0.59
0.7
20
40
40
20
30
DESCRIPTION
SYMBOL
TEST CONDITION
VALUE
MIN
CBE
Continental Device India Limited
Data Sheet
Page 2 of 4
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