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參數資料
| 型號： | PBMB150A6 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT MODULE H-Bridge 150A 600V |
| 中文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 文件頁數： | 1/3頁 |
| 文件大小： | 120K |
| 代理商： | PBMB150A6 |
IGBT
MODULE
H-Bridge 150A 600V
PBMB150A6
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS
(Tc=25
°
C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
Collector Current
1 ms
Collector Power Dissipation
J unction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Fall Time
Turn-off Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Item
DC
Forward Current
1 ms
Characteristic
Symbol
Peak Forward Voltage
V
F
Reverse Recovery Time
t
rr
THERMAL CHARACTERISTICS
Characteristic
IGBT
Thermal Impedance
DIODE
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
PBMB150A6
600
+/ - 20
150
300
560
-40 to +150
-40 to +125
2500
Unit
V
V
A
W
°
C
°
C
V
F
TOR
2
N
m
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=600V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=150A,V
GE
=15V
V
CE
=5V,I
C
=150mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 300V
R
L
= 2 ohm
R
G
= 5.1 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
2.1
-
15,000
0.15
0.25
0.2
0.45
Max.
2.0
1.0
2.6
8.0
-
0.3
0.4
0.35
0.7
Unit
mA
μ
A
V
V
pF
Switching Time
μ
s
Symbol
I
F
I
FM
Rated Value
150
300
Unit
A
Test Condition
I
F
=150A,V
GE
=0V
I
F
=150A,V
GE
=-10V,di/dt=150A/
μ
s
Min.
-
-
Typ.
1.9
0.15
Max.
2.4
0.25
Unit
V
μ
s
Symbol
Test Condition
Min.
-
-
Typ.
-
-
Max.
0.22
0.45
Unit
R
th(j-c)
J unction to Case
°
C/W
8- fasten- tab No 110
Dimension(mm)
Approximate Weight : 430g
相關PDF資料 |
PDF描述 |
|---|---|
| PBMB150B12 | IGBT MODULE H-Bridge 150A 1200V |
| PBMB200A6 | IGBT MODULE H-Bridge 200A 600V |
| PBMB300A6 | Photointerruptors 0.25mm slit width 0.18mA min 0.7V |
| PBMB50A6 | IGBT MODULE H_Bridge 50A 600V |
| PBMB50B12C | IGBT MODULE H-Bridge 50A 1200V |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PBMB150B12 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT MODULE H-Bridge 150A 1200V |
| PBMB150E6 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT Module-H Bridge 150A, 600V |
| PBMB200A6 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT MODULE H-Bridge 200A 600V |
| PBMB200B12 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Full Bridge IGBT Module 200A/1200V |
| PBMB200E6 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Full Bridge IGBT Module 200A/600V |
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