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參數資料
| 型號： | PBSS2515E,115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd |
| 中文描述： | 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-75, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 120K |
| 代理商： | PBSS2515E,115 |
1.
Product prole
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3515E.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efciency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Low power switches (e.g. motors, fans)
I Portable applications
1.4 Quick reference data
[1]
Pulse test: tp ≤ 300 s; δ≤ 0.02.
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 02 — 21 April 2009
Product data sheet
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
15
V
IC
collector current
-
0.5
A
ICM
peak collector current
single pulse;
tp ≤ 1ms
--1
A
RCEsat
collector-emitter
saturation resistance
IC = 500 mA;
IB =50mA
[1] -
300
500
m
相關PDF資料 |
PDF描述 |
|---|---|
| PBSS2515M,315 | 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd |
| PBSS2515VPN,115 | 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PBSS2515VS,115 | 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PBSS2515YPN,115 | 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| PBSS2540E,115 | 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PBSS2515F | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-490 制造商:NXP Semiconductors 功能描述:NPN Transistor 0.5A SOT490,PBSS2515F |
| PBSS2515F,115 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515M | 制造商:NXP Semiconductors 功能描述:NPN Transistor 0.5A SOT883,PBSS2515M |
| PBSS2515M T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515M,315 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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