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參數資料
| 型號： | PBYR2545CTX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier |
| 中文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 43K |
| 代理商： | PBYR2545CTX |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2545CTF, PBYR2545CTX
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Isolated mounting tab
V
R
= 40 V/ 45 V
I
O(AV)
= 20 A
V
F
≤
0.65V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2545CTF is supplied in the SOT186 package.
The PBYR2545CTX is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR25
PBYR25
40CTF
40CTX
40
45CTF
45CTX
45
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
40
45
V
V
R
I
O(AV)
T
hs
≤
86 C
square wave;
δ
= 0.5;
T
hs
≤
98 C
-
-
40
45
V
A
20
I
FRM
square wave;
δ
= 0.5;
T
≤
98 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
20
A
I
FSM
-
-
135
150
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
k
a1
1
a2
3
2
1 2 3
case
1 2 3
case
October 1998
1
Rev 1.300
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