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參數資料
| 型號： | PBYR2545CTX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier |
| 中文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 43K |
| 代理商： | PBYR2545CTX |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2545CTF, PBYR2545CTX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
all terminals to external
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186 package; R.H.
≤
65%; clean and
dustfree
MIN.
-
TYP. MAX. UNIT
-
1500
V
-
-
2500
V
sinusoidal waveform; R.H.
≤
65%; clean
and dustfree
f = 1 MHz
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
Thermal resistance junction
to heatsink
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air
MIN.
-
-
TYP. MAX. UNIT
-
4.8
-
4
K/W
K/W
R
th j-a
Thermal resistance junction
to ambient
-
55
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage per diode
CONDITIONS
I
F
= 20 A; T
j
= 125C
I
F
= 20 A
V
R
= V
RWM
V
R
= V
; T
= 100C
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
MIN.
-
-
-
-
-
TYP. MAX. UNIT
0.58
0.65
0.63
0.68
0.3
2
30
40
530
-
V
V
I
R
Reverse current per diode
mA
mA
pF
C
d
Junction capacitance per
diode
October 1998
2
Rev 1.300
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