- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367774 > PBYR3080WT (NXP SEMICONDUCTORS) Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) PDF資料下載
參數(shù)資料
| 型號： | PBYR3080WT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| 中文描述： | 15 A, 80 V, SILICON, RECTIFIER DIODE, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 46K |
| 代理商： | PBYR3080WT |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR30100WT series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 60 V/ 80 V/ 100 V
I
O(AV)
= 30 A
V
F
≤
0.7 V
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
1
anode 1
2
cathode
The
suppliedin the conventionalleaded
SOT429 (TO247) package.
PBYR30100WT
series
is
3
anode 2
mounting cathode
base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
80WT
80
UNIT
PBYR30
60WT
60
100WT
100
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
60
80
100
V
V
R
I
O(AV)
T
mb
≤
139 C
square wave;
δ
= 0.5;
T
mb
≤
124 C
-
-
60
80
30
100
V
A
I
FRM
square wave;
δ
= 0.5;
T
≤
124 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
30
A
I
FSM
-
-
180
200
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP. MAX. UNIT
-
1.4
-
1
45
-
K/W
K/W
K/W
k
a1
1
a2
3
2
2
3
1
November 1998
1
Rev 1.300
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PBYR320CTD | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| PBYR325CTD | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| PBYR345CTD | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| PBYR340 | Rectifier diodes Schottky barrier |
| PBYR340CTD | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PBYR320CTD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| PBYR325CTD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| PBYR340 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| PBYR340CTD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| PBYR345CTD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
發(fā)布緊急采購，3分鐘左右您將得到回復。