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參數(shù)資料
| 型號(hào)： | PBYR4040WT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢(shì)壘整流二極管) |
| 中文描述： | 40 A, 40 V, SILICON, RECTIFIER DIODE, TO-247 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 56K |
| 代理商： | PBYR4040WT |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR4045WT series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 40 V/ 45 V
I
F(AV)
= 40 A
V
F
≤
0.58 V
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode schottky
rectifier
diodes
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
in
a
plastic
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
The
suppliedin the conventionalleaded
SOT429 (TO247) package.
PBYR4045WT
series
is
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR40
40WT
45WT
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average output current (both square wave;
δ
= 0.5; T
mb
≤
120 C
diodes conducting)
Repetitive peak forward
square wave;
δ
= 0.5; T
mb
≤
120 C
current
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
Peak repetitive reverse
pulse width and repetition rate
surge current
limited by T
j max
Operating junction
temperature
Storage temperature
-
40
45
V
V
RWM
-
40
45
V
V
R
I
O(AV)
T
mb
≤
107 C
-
-
40
45
V
A
40
I
FRM
-
40
A
I
FSM
-
-
300
325
A
A
I
RRM
-
2
A
T
j
-
150
C
T
stg
- 65
150
C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP. MAX. UNIT
-
1.4
-
1
45
-
K/W
K/W
K/W
k
a1
1
a2
3
2
2
3
1
December 1998
1
Rev 1.000
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