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參數資料
型號: PCD3330-1
廠商: NXP Semiconductors N.V.
英文描述: Multistandard repertory dialler/ringer with EEPROM
中文描述: 多標準匯編撥號器/帶有EEPROM鈴聲
文件頁數: 24/32頁
文件大小: 152K
代理商: PCD3330-1
1997 Jan 15
24
Philips Semiconductors
Product specification
Multistandard repertory dialler/ringer with
EEPROM
PCD3330-1
Notes to characteristics
1.
Tone output, EEPROM erase and EEPROM write require V
DD
2.5 V.
2.
V
IL
= V
SS
, V
IH
= V
DD
; open drain outputs connected to V
SS
; all other outputs open; maximum values: external clock
at XTAL1; XTAL2 open; typical values at T
amb
= 25
°
C; crystal connected between XTAL1 and XTAL2.
3.
V
IL
= V
SS
, V
IL
= V
DD
; RESET, HOOK and CE/RT at V
SS
; crystal connected between XTAL1 and XTAL2;
open-drain outputs connected to V
SS
; all other outputs open.
4.
Values are specified for DTMF frequencies only (CEPT compatible).
5.
Related to the low group frequency component (CEPT compatible).
6.
Verified on sampling basis.
7.
After final testing the value of each EEPROM bit is typically HIGH, but this state cannot be guaranteed.
Inputs
V
IL
V
IH
I
LI
LOW level input voltage
HIGH level input voltage
input leakage current
0
0.7V
DD
1
0.3V
DD
V
DD
+1
V
V
μ
A
V
SS
V
I
V
DD
Port outputs
I
OL
I
OH
LOW level output sink current
HIGH level output pull-up source
current
at V
DD
= 3 V; V
O
= 0.4 V
at V
DD
= 3 V; V
O
= 2.7 V
at V
DD
= 3 V; V
O
= 0 V
at V
DD
= 3 V; V
O
= 2.6 V
0.7
10
0.7
3.5
30
140
3.5
300
mA
μ
A
μ
A
mA
I
OH1
HIGH level output push-pull
source current
Tone output
(notes 1 and 4)
V
HG(RMS)
V
LG(RMS)
f
V
DC
Z
O
G
v
output RMS voltage
HIGH group
LOW group
158
125
0.6
1.5
181
142
1
2
V
DD
100
2.0
205
160
+0.6
500
2.5
mV
mV
%
V
dB
frequency deviation
DC voltage level
output impedance
voltage gain (pre-emphasis) of
group
total harmonic distortion
THD
at T
amb
= 25
°
C; note 5
25
dB
EEPROM
(notes 1, 6 and 7)
N
cyc
t
ret
endurance (erase/write cycles)
data retention
100000
10
cycles
years
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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