- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384844 > PD55035 (意法半導(dǎo)體) RF POWER TRANSISTORS The LdmoST Plastic FAMILY PDF資料下載
參數(shù)資料
| 型號(hào)： | PD55035 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | PD55035 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
1/14
March, 21 2003
PD55035
PD55035S
RF POWER TRANSISTORS
The LdmoSTPlastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 35 W with 16.9 dB gain @ 500 MHz /
12.5 V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55035 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55035’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55035
BRANDING
PD55035
PowerSO-10RF
(straight lead)
ORDER CODE
PD55035S
BRANDING
PD55035S
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
40
V
±
20
V
7
A
95
W
165
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.0
°
C/W
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PD55035S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55F120 | THYRISTOR MODULE |
| PD55F160 | THYRISTOR MODULE |
| PD55F40 | THYRISTOR MODULE |
| PD55F80 | THYRISTOR MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD55035-E | 功能描述:射頻MOSFET電源晶體管 RF Pwr Transistors LDMOST Plastic N Ch RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55035S | 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 7 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55035SE | 制造商:STMicroelectronics 功能描述: |
| PD55035S-E | 功能描述:射頻MOSFET電源晶體管 POWER RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55035STR-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。