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參數資料
| 型號： | PD57002-01 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 250MA I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的| N溝道| 65V的五（巴西）直|毫安（丁）| LLCC |
| 文件頁數： | 1/4頁 |
| 文件大小： | 39K |
| 代理商： | PD57002-01 |
1/4
TARGET DATA
February, 21 2002
PD57002-01
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 2 W with 15 dB gain @ 960 MHz / 28 V
NEW LEADLESS PLASTIC PACKAGE
DESCRIPTION
The PD57002-01 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1000
MHz. The PD57002-01 is designed for high gain
and broadband performance operating in common
source mode at 28 V. PD57002-01 boasts the
excellent gain, linearity and reliability of ST’s latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT.
It is ideal for digital cellular BTS applications
requiring high linearity.
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
±
20
V
0.25
A
TBD
W
150
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
TBD
°
C/W
ORDER CODE
PD57002-01
BRANDING
PD57002-01
PowerFLAT
(5x5)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PD57002-E | 功能描述:射頻MOSFET電源晶體管 POWER RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57002-E_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| PD57002S | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 0.25A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57002S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57006 | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 1.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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