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參數資料
| 型號： | PDTA143 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PNP resistor-equipped transistor |
| 中文描述： | PNP配電阻型晶體管 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 66K |
| 代理商： | PDTA143 |
1998 Jul 23
3
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
10
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
V
V
V
65
65
+10
30
100
100
150
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
30
2.5
3.3
TYP.
1100
500
1.9
4.7
MAX.
100
1
50
0.9
150
UNIT
I
CBO
I
CEO
collector cut-off current
collector cut-off current
I
C
= 0; V
CB
=
50 V
I
B
= 0; V
CE
=
30 V
I
B
= 0; V
CE
=
30 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
10 mA; V
CE
=
5 V
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100
μ
A; V
CE
=
5 V
I
C
=
20 mA; V
CE
=
300 mV
nA
μ
A
μ
A
mA
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
mV
mV
V
k
6.1
resistor ratio
0.8
1
1.2
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
3
pF
R1
R2
相關PDF資料 |
PDF描述 |
|---|---|
| PDTA143EK | PNP resistor-equipped transistor |
| PDTA143ES | PNP resistor-equipped transistor |
| PDTA144 | PNP resistor-equipped transistor |
| PDTA144EEF | PNP resistor-equipped transistor |
| PDTA144EK | Terminal Block; No. of Positions:12; Pitch Spacing:0.15"; Mounting Type:PCB Straight Thru Hole; Gender:Male; No. of Contacts:12; No. of Rows:1 RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PDTA143E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
| PDTA143EE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
| PDTA143EE T/R | 功能描述:開關晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA143EE,115 | 功能描述:開關晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA143EEF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
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