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參數資料
| 型號： | PDTC123JEF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN resistor-equipped transistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-89, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 49K |
| 代理商： | PDTC123JEF |
1999 May 27
2
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistor
PDTC123JEF
FEATURES
Built-in bias resistors R1 and R2
(typ. 2.2 k
and 47 k
respectively)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in
an SC-89 (SOT490) plastic package.
PINNING
PIN
DESCRIPTION
1
2
3
base/input
emitter/ground
collector/output
Fig.1 Simplified outline (SC-89; SOT490) and symbol.
handbook, halfpage
MAM412
1
2
3
R1
R2
1
Top view
2
3
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
TYPE
NUMBER
MARKING
CODE
PDTC123JEF
28
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Refer to SC-89 (SOT490) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
10
V
V
V
65
65
+12
5
100
100
250
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
≤
25
°
C; note 1
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| PDTC123JK | NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |
| PDTC123JS | NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PDTC123JEF,115 | 功能描述:開關晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC123JK | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |
| PDTC123JK T/R | 功能描述:開關晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC123JK,115 | 功能描述:開關晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC123JM | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ |
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