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參數(shù)資料
| 型號(hào)： | PDTC143E |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN resistor-equipped transistor |
| 中文描述： | NPN配電阻型晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 65K |
| 代理商： | PDTC143E |
1998 Jul 31
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC143EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
10
V
V
V
65
65
+30
10
100
100
150
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
30
2.5
3.3
TYP.
1.1
1.9
4.7
MAX.
UNIT
I
CBO
I
CEO
collector cut-off current
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10 mA; V
CE
= 5 V
100
1
50
0.9
150
0.5
6.1
nA
μ
A
μ
A
mA
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
input-off voltage
input-on voltage
input resistor
mV
V
V
k
I
C
= 100
μ
A; V
CE
= 5 V
I
C
= 20 mA; V
CE
= 0.3 V
resistor ratio
0.8
1
1.2
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
2.5
pF
R1
R2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PDTC143T | NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open |
| PDTC143TEF | NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open |
| PDTC143TK | NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open |
| PDTC143TS | NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open |
| PDTC143XEF | NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 10 kohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTC143EE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
| PDTC143EE T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143EE,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143EE115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN W/RES 50V SOT-416 |
| PDTC143EEF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
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