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參數資料
| 型號： | PH4840S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 94.5 A, 40 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數： | 6/12頁 |
| 文件大小： | 84K |
| 代理商： | PH4840S |
Philips Semiconductors
PH4840S
N-channel TrenchMOS intermediate level FET
Preliminary data
Rev. 01 — 04 March 2004
6 of 12
9397 750 12814
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
003aaa432
0
10
20
30
40
50
ID
(A)
0
0.5
1
1.5
2
VDS (V)
3 V
2.8 V
4 V
VGS = 3.4 V
2.9 V
3.5 V
5 V
10 V
3.3 V
3.2 V
3.1 V
2.5 V
003aaa433
0
10
20
30
40
50
0
1
2
3
4
VGS (V)
ID
(A)
25
°
C
Tj = 150
°
C
003aaa434
0
5
10
15
20
0
10
20
30
40
50
ID (A)
(m
)
RDSon
10 V
7 V
VGS = 3.2 V
3.7 V
3.3 V
3.4 V
3.5 V
4 V
5 V
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
a
Tj (
°
C)
a
R
DSon 25 C
)
----------------------------
=
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