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參數資料
| 型號： | PHB193NQ06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 75 A, 55 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 89K |
| 代理商： | PHB193NQ06T |
PHP/PHB193NQ06T
N-channel TrenchMOS standard level FET
Rev. 01 — 06 May 2004
Product data
1.
Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
I
Standard level threshold
I
Very low on-state resistance.
I
Motors, lamps, solenoids
I
DC-to-DC converters
I
Uninterruptible power supplies
I
General industrial applications.
I
V
DS
≤
55 V
I
P
tot
≤
300 W
I
I
D
≤
75 A
I
R
DSon
≤
4 m
.
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 (TO-220AB) and SOT404 (D
2
-PAK), simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
[1]
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
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