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參數資料
型號: PHB36N06E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 41 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-3
文件頁數: 1/7頁
文件大小: 55K
代理商: PHB36N06E
Philips Semiconductors
Product specification
PowerMOS transistor
PHB36N06E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
60
41
125
175
38
V
A
W
C
m
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
30
41
29
164
125
175
175
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.2
UNIT
K/W
minimum footprint,
FR4 board (see Fig. 18).
50
-
K/W
1
3
mb
2
d
g
s
August 1996
1
Rev 1.000
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