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參數(shù)資料
| 型號： | PHB96NQ03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 293K |
| 代理商： | PHB96NQ03LT |
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 October 2001
Product data
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PHP96NQ03LT in SOT78 (TO-220AB)
PHB96NQ03LT in SOT404 (D
2
-PAK)
PHD96NQ03LT in SOT428 (D-PAK).
2.
Features
I
Low gate charge
I
Low on-state resistance.
3.
Applications
I
Optimized as a control FET in DC to DC converters.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pin
Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
SOT428 (D-PAK)
2
drain (d)
[1]
3
source (s)
mb
mounting base,
connected to drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
MBK091
Top view
1
3
mb
2
s
d
g
MBB076
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB96NQ03LT,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB98N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHB9N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB9NQ20T | 制造商:PHILIPS-SEMI 功能描述: |
| PHBL-1 | 制造商:Mid Atlantic 功能描述:Blank Panels, Black Brushed And Anodized Finish |
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