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參數資料
| 型號： | PHB96NQ03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 12/14頁 |
| 文件大小： | 293K |
| 代理商： | PHB96NQ03LT |
Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 23 October 2001
12 of 14
9397 750 08963
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6:
Rev Date
03
Revision history
CPCN
20011023
Description
Includes product data; third version; supersedes second version PHP96NQ03LT of
08 October 2001.
Table 5 “Characteristics” “Dynamic characteristics” on page 5
: Improvements in gate
charge and capacitance.
Includes product data; second version; supersedes initial version PHP96NQ03LT of
2 June 2001.
Product data; initial version
-
02
20011008
-
01
20010716
-
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相關代理商/技術參數 |
參數描述 |
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| PHB96NQ03LT,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB98N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHB9N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB9NQ20T | 制造商:PHILIPS-SEMI 功能描述: |
| PHBL-1 | 制造商:Mid Atlantic 功能描述:Blank Panels, Black Brushed And Anodized Finish |
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