- 您現在的位置：買賣IC網 > PDF目錄367937 > PHD11N03LT (NXP SEMICONDUCTORS) N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) PDF資料下載
參數資料
| 型號： | PHD11N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| 中文描述： | 10.3 A, 30 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 105K |
| 代理商： | PHD11N03LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHB11N03LT, PHD11N03LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 30 V
’Trench’
technology
Low on-state resistance
Fast switching
Logic level compatible
I
D
= 10.5 A
R
DS(ON)
≤
150 m
(V
GS
= 5 V)
R
DS(ON)
≤
130 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PHB11N03LT is supplied in the SOT404 (D
2
PAK) surface mounting package.
The PHD11N03LT is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
SOT428 (DPAK)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
V
GSM
Pulsed gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
30
30
±
15
±
20
10.3
7.3
41
33
175
UNIT
V
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1
2
3
tab
1
It is not possible to make contact to pin 2 of the SOT404 or SOT428 package
September 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| PHB129NQ04LT | N-channel TrenchMOS logic level FET |
| PHP129NQ04LT | N-channel TrenchMOS logic level FET |
| PHB18NQ20T | N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| PHP18NQ20T | N-channel TrenchMOS transistor |
| PHB193NQ06T | N-channel TrenchMOS standard level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHD11N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHD-128-4002-BLK | 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING 50.8MM ID PO BLK 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 制造商:pro-power 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 8FT, PK2; I.D. Supplied - Metric:50.8mm; I.D. Supplied - Imperial:2"; I.D. Recovered Max - Metric:25.4mm; I.D. Recovered Max - Imperial:1"; Shrink Ratio:2:1; Shrink Tubing / Boot Color:Black ;RoHS Compliant: Yes |
| PHD-128-6002-BLK | 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING BLK 制造商:pro-power 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 1FT, PK2; I.D. Supplied - Metric:50.8mm; I.D. Supplied - Imperial:2"; I.D. Recovered Max - Metric:25.4mm; I.D. Recovered Max - Imperial:1"; Shrink Ratio:2:1; Shrink Tubing / Boot Color:Black ;RoHS Compliant: Yes |
| PHD12N10E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHD12NQ15T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
發布緊急采購，3分鐘左右您將得到回復。