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參數資料
| 型號： | PHD24N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 368K |
| 代理商： | PHD24N03LT |
PHD24N03LT
N-channel enhancement mode field-effect transistor
Rev. 02 — 27 July 2000
Product specification
c
c
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PHD24N03LT in SOT428 (D-PAK).
2.
Features
I
TrenchMOS technology
I
Low on-state resistance
I
Avalanche ruggedness rated
I
Logic level compatible
I
Surface mount package.
3.
Applications
I
DC to DC converter
I
High speed, low resistance switch
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT428 package.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pin
Pinning - SOT428, simplified outline and symbol
Description
Simplified outline
Symbol
1
gate (g)
SOT428 (D-PAK)
N-channel MOSFET
2
drain (d)
[1]
3
source (s)
4
mounting base,
connected to
drain (d)
MBK091
Top view
1
3
4
2
d
g
s
03ab30
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