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參數資料
| 型號： | PHD2N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-428, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 94K |
| 代理商： | PHD2N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 600 V
I
D
= 1.9 A
R
DS(ON)
≤
6
GENERAL DESCRIPTION
N-channel,enhancement modefield-effectpower transistor,intendedforusein off-lineswitchedmode powersupplies,
T.V.and computer monitor powersupplies, d.c. tod.c.converters, motor controlcircuits and generalpurpose switching
applications.
The PHP2N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB2N60E is supplied in the SOT404 surface mounting package.
The PHD2N60E is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
1.9
1.2
7.6
50
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
1
2
3
tab
1
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
August 1998
1
Rev 1.100
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