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參數(shù)資料
型號(hào): PHM25NQ10T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS standard level FET
中文描述: 30.7 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8
文件頁(yè)數(shù): 11/13頁(yè)
文件大小: 284K
代理商: PHM25NQ10T
Philips Semiconductors
PHM25NQ10T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 September 2003
11 of 13
9397 750 11843
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9.
Revision history
Table 6:
Rev Date
03
Revision history
CPCN
20030911
Description
Product data (9397 750 11843)
Modifications:
Section 3 “Ordering information”
Addition of ordering information.
Section 4 “Limiting values”
Addition of E
DS(AL)S.
Section 4 “Limiting values”
Addition of E
DS(AL)R.
Section 8 “Soldering”
Addition of soldering footprint.
Preliminary data (9397 750 10884)
Modifications:
Section 5 “Thermal characteristics”
Thermal resistance modified.
Section 5 “Thermal characteristics” Figure 4
modified.
Section 4 “Limiting values”
Drain current (DC) modified.
Section 4 “Limiting values” Figure 3
modified.
Section 6 “Characteristics”
R
DSon
T
j
= 150
°
C modified.
Section 6 “Characteristics” Figure 6
replaced.
Section 6 “Characteristics” Figure 8
modified.
Section 6 “Characteristics”
Gate charge test condition and typical values modified.
Section 7 “Package outline”
Mounting base repositioned.
Preliminary data (9397 750 09866)
-
02
20030129
-
01
20020530
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