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參數(shù)資料
| 型號： | PHN603S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS/ Schottky Diode Array Three Phase Brushless d.c. Motor Driver(TrenchMOS/肖特基二極管陣列三相位無刷d.c.馬達驅(qū)動器) |
| 中文描述： | 5.5 A, 25 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AD |
| 封裝： | PLASTIC, SO-24 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 116K |
| 代理商： | PHN603S |
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
PHN603S
FEATURES
SYMBOL
QUICK REFERENCE DATA
Schottky diode across each
MOSFET
Low on-state resistance
Fast switching
Logic level compatible
Surface mount package
V
DS
= 25 V
I
D
= 5.5 A
R
DS(ON)
≤
35 m
(V
GS
= 10 V)
R
DS(ON)
≤
55 m
(V
GS
= 4.5 V)
GENERAL DESCRIPTION
PINNING
SOT137-1 (SO24)
Six
mode,
power transistors and six schottky
diodes
configured
half-bridges. This device has low
on-state
resistance
switching.
The
applicationisin computerdiskand
tape drives as a three phase
brushless d.c. motor driver.
n-channel,
logic
enhancement
level,
field-effect
PIN
DESCRIPTION
1,4
2
3
5,8
6
7
9,12
10
11
13
14-16, 18-20, 22-24 drain 4
17
21
drain 1
source 1
gate 1
drain 2
source 2
gate 2
drain 3
source 3
gate 3
gate 4
as
three
and
intended
fast
The PHN603S is supplied in the
SOT137-1
(SO24)
mounting package.
surface
gate 5
gate 6
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per device (DC)
CONDITIONS
T
j
= 25 C to 150C
MIN.
-
MAX.
25
UNIT
V
V
DS
V
DGR
V
GS
I
D
T
j
≤
80 C
1
R
GS
= 20 k
-
-
-
-
-
-
25
25
±
20
5.5
3.5
22
V
V
V
A
A
A
T
a
= 25 C
T
a
= 100 C
T
a
= 25 C
I
DM
Drain current per device (pulse
peak value)
Total power dissipation per device
P
tot
T
a
= 25 C
T
a
= 100 C
T
a
= 25 C
T
a
= 100 C
-
-
-
-
1.67
0.67
2.78
1.11
150
W
W
W
W
C
P
tot
Total power dissipation all devices
conducting
Storage & operating temperature
T
stg
, T
j
- 55
D4
D1
D2
D3
S1
S2
S3
G1
G2
G3
G4
G5
G6
1
12
13
24
Top view
1
The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.
October 1998
1
Rev 1.000
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