- 您現在的位置：買賣IC網 > PDF目錄382392 > PHP119NQ06T (NXP SEMICONDUCTORS) N-channel TrenchMOS standard level FET PDF資料下載
參數資料
| 型號： | PHP119NQ06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 75 A, 55 V, 0.0071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 2/13頁 |
| 文件大小： | 94K |
| 代理商： | PHP119NQ06T |
Philips Semiconductors
PHP/PHB119NQ06T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 05 May 2004
2 of 13
9397 750 13176
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
TO-220AB
D
2
-PAK
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Version
SOT78
PHP119NQ06T
PHB119NQ06T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
55
55
±
20
75
75
240
200
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
75
240
A
A
unclamped inductive load; I
D
= 75 A;
t
p
= 0.1 ms; V
DD
≤
55 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
-
280
mJ
相關PDF資料 |
PDF描述 |
|---|---|
| PHB119NQ06T | N-channel TrenchMOS standard level FET |
| PHP130N03LT | TrenchMOS transistor Logic level FET |
| PHP152NQ03LT | TrenchMOS logic level FET |
| PHP152NQ03LTA | N-channel TrenchMOS logic level FET |
| PHP18N20E | PowerMOS transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHP119NQ06T,127 | 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP11N06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHP11N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP120 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 170V 15KW 2-Pin 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR CASE-11 SD - Bulk |
| PHP120H2 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 170V 15KW 2-Pin |
發布緊急采購，3分鐘左右您將得到回復。