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參數資料
| 型號： | PHP14NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS standard level FET |
| 中文描述： | 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 2/14頁 |
| 文件大小： | 269K |
| 代理商： | PHP14NQ20T |
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 March 2002
2 of 14
9397 750 09535
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 175
o
C
T
j
= 25 to 175
o
C; R
GS
= 20 k
Min
-
-
-
Max
200
200
±
20
Unit
V
V
V
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 25
°
C
T
mb
= 100
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
-
-
-
14
10
56
A
A
A
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(ALS)
non-repetitive avalanche energy
I
DS(ALM)
peak non-repetitive avalanche current
total power dissipation
storage temperature
operating junction temperature
-
55
55
125
+175
+175
W
°
C
°
C
source (diode forward) current (DC)
peak source (diode forward) current
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
14
56
A
A
unclamped inductive load; I
D
= 14 A;
t
p
= 20
μ
s; V
DD
≤
25 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C;
Figure 15
-
-
70
14
mJ
A
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