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參數資料
| 型號： | PHP212L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-channel enhancement mode MOS transistor |
| 中文描述： | 4000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 文件頁數： | 4/8頁 |
| 文件大小： | 62K |
| 代理商： | PHP212L |
1997 Jun 20
4
Philips Semiconductors
Objective specification
Dual P-channel enhancement
mode MOS transistor
PHP212L
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per P-channel
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
=
10
μ
A
V
GS
= V
DS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
24 V
V
GS
=
±
12 V; V
DS
= 0
V
GS
=
2.5 V; I
D
=
1 A
V
GS
=
4.5 V; I
D
=
2 A
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
=
6 V; V
DD
=
15 V; I
D
=
1 A
V
GS
=
6 V; V
DD
=
15 V; I
D
=
1 A
V
GS
=
6 V; V
DD
=
15 V; I
D
=
1 A
30
0.5
450
200
100
13
1
4
1.1
100
±
100
0.25
0.12
V
V
nA
nA
pF
pF
pF
nC
nC
nC
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times
t
d(on)
turn-on delay time
V
GS
= 0 to
6 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
V
GS
= 0 to
6 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
V
GS
= 0 to
6 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
V
GS
=
6 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
V
GS
=
6 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
V
GS
=
6 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
gen
= 6
6
ns
t
r
rise time
4
ns
t
on
turn-on switching time
10
ns
t
d(off)
turn-off delay time
29
ns
t
f
fall time
16
ns
t
off
turn-off switching time
45
ns
Source-drain diode
V
SD
source-drain diode forward
voltage
reverse recovery time
V
GD
= 0; I
S
=
1.25 A
1.3
V
t
rr
I
S
=
1.25 A; di/dt = 100 A/
μ
s
75
ns
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