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參數資料
型號: PHP3N20L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 3.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數: 1/7頁
文件大小: 53K
代理商: PHP3N20L
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
PHP3N20L
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
envelope
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
featuring
high
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
200
3.5
50
1.5
V
A
W
motor
control
purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
3.5
2.5
14
50
0.33
±
15
±
20
UNIT
A
A
A
W
W/K
V
V
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
V
GSM
Non-repetitive gate-source
voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
t
p
50
μ
s
V
DD
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 5 V
V
DD
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 5 V
-
25
mJ
-
3.5
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
175
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
TYP.
-
MAX.
3
UNIT
K/W
R
th j-a
60
-
K/W
1 2 3
tab
d
g
s
September 1997
1
Rev 1.000
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