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參數資料
| 型號： | PHP44N06LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 80K |
| 代理商： | PHP44N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP44N06LT, PHB44N06LT, PHD44N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 44 A
R
DS(ON)
≤
28 m
(V
GS
= 5 V)
R
DS(ON)
≤
26 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP44N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB44N06LT is supplied in the SOT404 surface mounting package.
The PHD44N06LT is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
44
31
176
114
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
2
3
tab
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
September 1998
1
Rev 1.400
相關PDF資料 |
PDF描述 |
|---|---|
| PHB44N06LT | TrenchMOS transistor Logic level FET |
| PHD44N06LT | TrenchMOS transistor Logic level FET |
| PHP44N06T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| PHP45N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| PHP52N06T | N-channel enhancement mode field-effect transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHP44N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP45N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHP45N03LTA | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHP45N03LTA,127 | 功能描述:MOSFET N-CH 25V 40A TO220AB RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:TrenchMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| PHP45N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
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