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參數資料
| 型號： | PHP45NQ15T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 45.1 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 2/13頁 |
| 文件大?。?/td> | 86K |
| 代理商： | PHP45NQ15T |
9397 750 14012
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
2 of 13
Philips Semiconductors
PHP/PHB45NQ15T
N-channel TrenchMOS standard level FET
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
TO-220AB
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead
TO-220AB
Plastic single-ended surface mounted package (D
2
-PAK); 3 leads (one lead
cropped)
Version
SOT78
PHP45NQ15T
PHB45NQ15T
D
2
-PAK
SOT404
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
150
150
±
20
45.1
31.9
90.2
230
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
45.1
90.2
A
A
unclamped inductive load; I
D
= 19.1 A;
t
p
= 0.1 ms; V
DD
≤
150 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
-
180
mJ
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