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參數資料
型號: PHW45NQ10T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場效應管)
中文描述: 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數: 1/11頁
文件大小: 108K
代理商: PHW45NQ10T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Very low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 100 V
I
D
= 47 A
R
DS(ON)
25 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’
trench
’ technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB45NQ10T is supplied in the SOT404 (D
2
PAK) surface mounting package.
The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
SOT429 (TO247)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
47
33
188
150
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
2
3
1
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin 2 of the SOT404 package.
August 1999
1
Rev 1.000
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