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參數資料
| 型號： | PHX10N40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
| 中文描述： | 5.3 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 74K |
| 代理商： | PHX10N40E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX10N40E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Isolated package
V
DSS
= 400 V
I
D
= 5.3 A
R
DS(ON)
≤
0.55
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
case
isolated
The PHX10N40E is supplied in the
SOT186A
full
package.
pack,
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
±
30
5.3
3.4
42
37
150
UNIT
V
V
V
A
A
A
W
C
T
hs
= 25 C; V
GS
= 10 V
T
hs
= 100 C; V
GS
= 10 V
T
hs
= 25 C
T
hs
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 8.8 A;
t
p
= 0.23 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
526
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 10.6 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
13
mJ
I
AS
, I
AR
-
10.6
A
d
g
s
1 2 3
case
1
pulse width and repetition rate limited by T
j
max.
December 1998
1
Rev 1.200
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