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參數資料
| 型號： | PHX18NQ11 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標準電平場效應管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 94K |
| 代理商： | PHX18NQ11 |
PHX18NQ11T
N-channel TrenchMOS standard level FET
Rev. 01 — 13 February 2004
Product data
M3D308
1.
Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
I
Low on-state resistance
I
Isolated mounting base
I
Fast switching
I
Low thermal resistance
I
DC-to-DC converters
I
Switched-mode power supplies
I
V
DS
≤
110 V
I
P
tot
≤
31.2 W
I
I
D
≤
12.5 A
I
R
DSon
≤
90 m
Table 1:
Pin
1
2
3
mb
Pinning - SOT186A (TO-220F), simplified outline and symbol
Description
Simplified outline
gate (g)
source (s)
drain (d)
mounting base;
isolated
Symbol
SOT186A (TO-220F)
MBK110
1
mb
2 3
s
d
g
MBB076
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| PHX18NQ11T | N-channel TrenchMOS standard level FET |
| PHX18NQ20T | N-channel enhancement mode field-effect transistor |
| PHX1N40E | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
| PHX1N40 | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
| PHX1N50E | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHX18NQ11T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
| PHX18NQ11T,127 | 功能描述:MOSFET TRENCH-100 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX18NQ20T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHX18NQ20T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX1N40 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
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