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參數資料
| 型號： | PHX18NQ11 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標準電平場效應管 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 94K |
| 代理商： | PHX18NQ11 |
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
5 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 100 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 9 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
110
99
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
2
1.2
-
3
-
-
4
-
4.4
V
V
V
I
DSS
drain-source leakage current
-
-
-
-
-
10
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
67
148
90
198
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 12 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 3 A; V
DD
= 80 V; V
GS
= 10 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
21
2.5
8
635
105
60
6
12
20
10
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
V
DD
= 50 V; R
L
= 15
; V
GS
= 10 V; R
G
= 5.6
-
-
-
0.87
55
135
1.2
-
-
V
ns
nC
I
S
= 12 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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| PHX18NQ11T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
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