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參數(shù)資料
| 型號： | PHX18NQ11 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標準電平場效應管 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PHX18NQ11 |
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
7 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
Tj (
°
C)
VGS(th)
(V)
max
min
typ
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
ID
(A)
0
2
4
6
VGS (V)
max
typ
min
03am67
10
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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| PHX1N40 | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHX18NQ11T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
| PHX18NQ11T,127 | 功能描述:MOSFET TRENCH-100 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX18NQ20T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHX18NQ20T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX1N40 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
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