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參數資料
| 型號： | PHX3055E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 9 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數： | 7/8頁 |
| 文件大小： | 96K |
| 代理商： | PHX3055E |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX3055E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT186A
TO-220
0
5
10 mm
scale
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220
SOT186A
A
A1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are
2.5
×
0.8 max. depth
D
D1
L
L2
L1
b1
b2
e1
e
b
w
M
1
2
3
q
E
P
T
UNIT
D
b1
D1
e
q
Q
P
L
c
L2
(1)
e1
A
5.08
3
mm
4.6
4.0
A1
2.9
2.5
b
0.9
0.7
1.1
0.9
b2
1.4
1.2
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5
0.4
L1
3.30
2.79
j
2.7
2.3
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
97-06-11
August 1999
7
Rev 1.000
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