- 您現在的位置：買賣IC網 > PDF目錄382394 > PHX3N50E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數資料
| 型號： | PHX3N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.1 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數： | 7/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | PHX3N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX3N50E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.19. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
December 1998
7
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| PHX3N60E | PowerMOS transistors Avalanche energy rated |
| PI4884 | TrenchMOS logic level FET |
| PIP202-12M | DC to DC converter powertrain |
| PIP3105 | KPSE 5C 5#16 PIN PLUG |
| PIP3105-P | Logic level TOPFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHX3N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX45NQ11T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
| PHX45NQ11T,127 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX4N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX4N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP4N50E |
發布緊急采購，3分鐘左右您將得到回復。