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參數資料
| 型號： | PMWD26UN |
| 英文描述： | 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 雙uTrenchMOS（TM）超低水平場效應管 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 240K |
| 代理商： | PMWD26UN |
PMWD26UN
Dual
μ
TrenchMOS ultra low level FET
Rev. 01 — 22 January 2003
Product data
M3D647
1.
Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS technology.
Product availability:
PMWD26UN in SOT530-1 (TSSOP8).
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
I
Surface mounting package
I
Very low threshold
I
Low profile
I
Fast switching.
I
Portable appliances
I
Battery management
I
PCMCIA cards
I
Load switching.
I
V
DS
≤
20 V
I
P
tot
≤
2.3 W
I
I
D
≤
5.2 A
I
R
DSon
≤
30 m
Table 1:
Pin
1
2,3
4
5
6,7
8
Pinning - SOT530-1, simplified outline and symbol
Description
drain1 (d1)
source1 (s1)
gate1 (g1)
gate2 (g2)
source2 (s2)
drain2 (d2)
Simplified outline
Symbol
SOT530-1
MBK885
Top view
1
4
8
5
s1
d1
g1
s2
MSD901
d2
g2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
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