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參數資料
| 型號： | PN5138 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Small Signal Transistors |
| 中文描述： | 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 23K |
| 代理商： | PN5138 |
P
Discrete POWE R & Signal
Technologies
PNP General Purpose Amplifier
PN5138
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
30
5.0
500
V
V
V
mA
°
C
-55 to +150
Symbol
Characteristic
Max
Units
PN5138
625
5.0
83.3
200
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
CBE
TO-92
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| PN5172 | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-92 |
| 2N5308A | TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 300MA I(C) | TO-98 |
| GES5812 | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 750MA I(C) | TO-92 |
| GES5814 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 750MA I(C) | TO-92 |
| GES5818 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 750MA I(C) | TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PN5138 LEADFREE | 功能描述:兩極晶體管 - BJT PNP Gen Pur SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN5138/D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT PNP 30V 0.5A 3-Pin TO-92 Ammo 制造商:Fairchild Semiconductor 功能描述:Trans GP BJT PNP 30V 0.5A 3-Pin TO-92 Ammo |
| PN5138_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| PN5138_11 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:PNP SILICON TRANSISTOR |
| PN5138_D26Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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