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參數資料
型號: Q62702-A1017
廠商: SIEMENS AG
英文描述: Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators)
中文描述: 硅雙肖特基二極管(高級平衡混頻器,探測器和調制器相壘二極管)
文件頁數: 4/11頁
文件大小: 101K
代理商: Q62702-A1017
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料
PDF描述
Q62702-A1025 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1028 Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Q62702-A1030 Silicon Switching Diode Array (For high speed switching applications Common cathode)
Q62702-A1031 Silicon Switching Diode Array (For high speed switching applications Common anode)
Q62702-A1036 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
相關代理商/技術參數
參數描述
Q62702-A1025 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1028 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies)
Q62702-A1030 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high speed switching applications Common cathode)
Q62702-A1031 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high speed switching applications Common anode)
Q62702-A1036 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
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