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參數(shù)資料
| 型號： | Q62702-C2119 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| 中文描述： | NPN硅晶體管自動對焦（為自動驅(qū)動器和輸出級高集電極電流） |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-C2119 |
BGC420
High Frequency Products
7
Edition A13, 05/99
SPICE Model
The following SPICE Listing describes the circuit shown in figure 3. It is valid for low frequencies. For
frequencies above 100MHz the parasitic circuit elements noted in figure 4 and table 1 should be added.
* Preliminary SPICE Model for BGC420 (valid for frequencies below 100MHz)
* SIEMENS HIGH FREQUENCY PRODUCTS
* Small Scale MMIC Design Group
.PARAM R=82
** Analysis setup **
*.TRAN 2ns 15u 0 2n
.TEMP +27
.DC LIN V1 0V 4V 0.1V
*.DC LIN V2 0V 3V 0.1V
.STEP PARAM R LIST 56 82 120 680
* Voltage supply
V1
Vcc 0
V2
Vc 0
*Vpul Vc 0
DC 3.0V
DC 0.0V
PULSE(0 3V 100ns 0 0 9us 1000m)
X3
X4
R1
X2
R2
R3
R4
Q1
Vc,4
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
vin
2
C6
Rin
C7
3
V
Rout
Figure. 3: Circuit used in the SPICE File
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-C2120 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| Q62702-C2122 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2123 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2125 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2126 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-C2120 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2122 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2123 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2125 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2126 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
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